Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs
نویسندگان
چکیده
منابع مشابه
construction and validation of translation metacognitive strategy questionnaire and its application to translation quality
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Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon
Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches ...
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– We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical etching of silicon. The anisotropy of the macroscopic etching patterns observed in the experiments is explained by two mechanisms at an atomistic scale: the weakening of backbonds following OH termination of surface sites and the existence of significant interaction between the surface-termina...
متن کاملThree-Dimensional Simulation of Anisotropic Wet Chemical Etching Process
In this paper, we present result on the development of a simulation tool for the three-dimensional anisotropic wet chemical etching of bulk silicon etching or bulk micromaching. As a test of our simulation tool, we present several simulation results. Several simulation results demonstrate our simulation tool which is quite efficient for the design and development of MEMS device structure. The d...
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ژورنال
عنوان ژورنال: Active and Passive Electronic Components
سال: 2004
ISSN: 0882-7516,1563-5031
DOI: 10.1080/08827510310001616858